Technique to radiation-harden trench refill oxides
US8021991B2 · kind B2 · utility
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Key dates
| Filing date | Feb 28, 2006 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | May 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxide films are deposited under conditions generating a silicon-rich oxide in which silicon nanoclusters form either during deposition or during subsequent annealing. Such deposition conditions include those producing films with optical indices (n) greater than 1.46. The method of the present invention reduces the TID radiation-induced shifts for the oxides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.