Reed K. Lawrence
5Patents
2h-index
4Co-inventors
36Inventor score
Filing activity: Nov 1, 2001 → Oct 7, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7876602B2 | Single-event upset immune static random access memory cell circuit, system, and method | Physics | 15 | Active |
| US6551898B1 | Creation of a polarizable layer in the buried oxide of silicon-on-insulator substrates for the fabrication of non-volatile memory | Electricity | 6 | Expired |
| US7112850B2 | Non-volatile memory device with a polarizable layer | Electricity | 1 | Expired |
| US8021991B2 | Technique to radiation-harden trench refill oxides | Electricity | 0 | Expired |
| US8036023B2 | Single-event upset immune static random access memory cell circuit | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.