Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
US8022481B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jan 21, 2009 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Apr 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor substrate, a shallow trench isolation structure having a dielectric material disposed in voids of a trench-fill material and a method for forming the shallow trench isolation structure. The voids may be formed during a wet clean process after the dielectric material is formed in the trench. A conformal silicon nitride layer is formed over the substrate and in the voids. After removal of the silicon nitride layer, the voids are at least partially filled by the silicon nitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.