Electrostatic discharge management apparatus, systems, and methods
US8022498B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2007 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jul 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
Apparatus, systems, and methods may include managing electrostatic discharge events by using a semiconductor device having a non-aligned gate to implement a snap-back voltage protection mechanism. Such devices may be formed by doping a semiconductor substrate to form a first conductive region as a well, forming one of a source region and a drain region in the well, depositing a layer of polysilicon on the substrate to establish a gating area that does not overlap the one of the source region and the drain region, and forming an integrated circuit supported by the substrate to couple to the one of the source region and the drain region to provide snap-back voltage operation at a node between the integrated circuit and the source or drain region. Additional apparatus, systems, and methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.