Film formation apparatus for semiconductor process and method for using the same
US8025931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2007 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Feb 26, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.