Method of forming silicon oxide film and method of production of semiconductor memory device using this method
US8026187B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.