Low pH mixtures for the removal of high density implanted resist
US8026200B2 · kind B2 · utility
19Cited by
13References
26Claims
0Family size
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Key dates
| Filing date | May 1, 2009 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.