Process for selective area deposition of inorganic materials
US8030212B2 · kind B2 · utility
16Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Dec 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.