Patent · US Active

Simplified pitch doubling process flow

US8030217B2 · kind B2 · utility

3Cited by

101References

25Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Ardavan Niroomand · Boise, US
Baosuo Zhou · Loomis, US
Ramakanth Alapati · Boise, US

Key dates

Filing date	Apr 30, 2010
Grant date	Oct 4, 2011
Priority date	—
Expiry date	Apr 30, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.