Field-effect transistor and method for manufacturing a field-effect transistor

US8030703B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dietmar Kotz · Moosburg, AT
• Martin Poelzl · Ossiach, AT
• Rudolf Zelsacher · Klagenfurt, AT

Key dates

• Filing date: Dec 26, 2007
• Grant date: Oct 4, 2011
• Expiry date: Apr 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A field-effect transistor and a method for manufacturing a field-effect transistor is disclosed. One embodiment includes a substrate having a surface along which a trench is implemented, wherein the trench has a trench bottom and a trench edge. A source area is implemented at the trench edge and a gate electrode at least partially implemented in the trench and separated from the substrate by an insulation layer. The field-effect transistor includes a drain electrode at a side of the substrate facing away from the surface. An additional electrode is implemented between the gate electrode and the trench bottom and electrically insulated from the substrate and an electrical connection between the additional electrode and the gate electrode, wherein the electrical connection has a predetermined ohmic resistance value.