Semiconductor device
US8030717B2 · kind B2 · utility
0Cited by
4References
2Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Mar 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.