Semiconductor device
US8031511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2011 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Feb 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
At the time of, for example, a set operation (SET) for making a phase-change element in a crystalline state, a pulse of a voltage Vreset required for melting the element is applied to the phase-change element, and subsequently a pulse of a voltage Vset that is lower than Vreset and is required for crystallizing the element is applied thereto. And, the magnitude of this voltage Vset is then changed depending on the ambient temperature so that the magnitude of the voltage Vset is small as the temperature becomes high (TH). In this manner, a margin of a write operation between the set operation and a reset operation (RESET) for making the element to be in amorphous state is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.