Methods of operating embedded flash memory devices

US8031532B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Danny Pak-Chum Shum · Poughkeepsie, US
• Armin Tilke · Beacon, US
• Jiang Yan · Beijing, CN

Key dates

• Filing date: Feb 22, 2010
• Grant date: Oct 4, 2011
• Expiry date: Apr 4, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

Flash memory device structures and methods of manufacture thereof are disclosed. The flash memory devices are manufactured on silicon-on-insulator (SOI) substrates. Shallow trench isolation (STI) regions and the buried oxide layer of the SOI substrate are used to isolate adjacent devices from one another. The methods of manufacture require fewer lithography masks and may be implemented in stand-alone flash memory devices, embedded flash memory devices, and system on a chip (SoC) flash memory devices.