Gas distribution system for a post-etch treatment system
US8034176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2006 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Sep 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.