Method for insulating film formation, storage medium from which information is readable with computer, and processing system
US8034179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2009 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.