Method for inspection of defects on a substrate
US8034641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2010 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Oct 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.