Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
US8034655B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2008 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Jan 29, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.