Thermal interface material with support structure
US8034662B2 · kind B2 · utility
12Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2009 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Mar 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.