HDP-CVD process, filling-in process utilizing HDP-CVD, and HDP-CVD system
US8034691B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Aug 18, 2008 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Aug 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An HDP-CVD process is described, including a deposition step conducted in an HDP-CVD chamber and a pre-heating step that is performed outside of the HDP-CVD chamber before the deposition step and pre-heats a wafer to a temperature higher than room temperature and required in the HDP-CVD process deposition step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.