Methods of forming through substrate interconnects
US8034702B2 · kind B2 · utility
0Cited by
14References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2007 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Jun 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.