Method for forming composite barrier layer
US8034709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2008 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Nov 24, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.