Patent · US Active

Integrated circuitry

US8035129B2 · kind B2 · utility

5Cited by

53References

21Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Nirmal Ramaswamy · Boise, US
Gurtej S. Sandhu · Boise, US
Cem Basceri · Boise, US
Eric Blomiley · Boise, US

Key dates

Filing date	Jun 22, 2010
Grant date	Oct 11, 2011
Priority date	—
Expiry date	Jun 22, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6728
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.