Phase change memory program method without over-reset
US8036014B2 · kind B2 · utility
20Cited by
228References
32Claims
0Family size
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Key dates
| Filing date | Nov 6, 2008 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Aug 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/009
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a fixed sequence of voltage pulses across the memory cell of increasing pulse height to change the resistance state from the lower resistance state to the higher resistance state. The fixed sequence of voltage pulses cause increasing current through the phase change memory element until change to the higher resistance state occurs, and after the change the voltage pulses in the fixed sequence causing a voltage across the phase change memory element less than the threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.