Treatment of low dielectric constant films using a batch processing system
US8039049B2 · kind B2 · utility
3Cited by
10References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Jun 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.