Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices

US8039398B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Frank Feustel · Dresden, DE
• Robert Seidel · Dresden, DE
• Juergen Boemmels · Heverlee, BE

Key dates

• Filing date: Oct 3, 2007
• Grant date: Oct 18, 2011
• Expiry date: Aug 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Prior to performing a CMP process for planarizing a metallization level of an advanced semiconductor device, an appropriate cap layer may be formed in order to delay the exposure of metal areas of reduced height level to the highly chemically reactive slurry material. Consequently, metal of increased height level may be polished with a high removal rate due to the mechanical and the chemical action of the slurry material, while the chemical interaction with the slurry material may be substantially avoided in areas of reduced height level. Therefore, a high process uniformity may be achieved even for pronounced initial surface topographies and slurry materials having a component of high chemical reactivity.