Methods of forming patterns utilizing lithography and spacers
US8039399B2 · kind B2 · utility
13Cited by
12References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2008 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Feb 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the substrate. At least some of the features of said second set alternate with features of the first set. Spacer material is formed over and between the features of the first and second sets. The spacer material is anisotropically etched to form spacers along the features of the first and second sets. The features of the first and second sets are then removed to leave a pattern of the spacers over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.