Power semiconductor component having a topmost metallization layer
US8039931B2 · kind B2 · utility
1Cited by
16References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2005 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Feb 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as a result, a protection and sealing material region to be provided is formed, whilst avoiding electrically insulating additional protection and sealing layers that are usually to be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.