Creating short program pulses in asymmetric memory arrays
US8040721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Feb 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods and apparatus for adjusting voltages of bit and word lines to create short programming pulses to program a memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, switching the first line from the first voltage to a second voltage, and switching the first line from the second voltage to the first voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results. The switching operations together may create a first pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.