Method for forming oxide film on silicon wafer
US8043871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Mar 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.