Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate
US8043947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2007 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Mar 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for semiconductor processing provides a DSB semiconductor body having a first crystal orientation, a second crystal orientation, and a border region disposed between the first and second crystal orientations. The border region further has a defect associated with an interface of the first crystal orientation and second the second crystal orientation, wherein the defect generally extends a distance into the semiconductor body from a surface of the body. A sacrificial portion of the semiconductor body is removed from the surface thereof, wherein removing the sacrificial portion at least partially removes the defect. The sacrificial portion can be defined by oxidizing the surface at low temperature, wherein the oxidation at least partially consumes the defect. The sacrificial portion can also be removed by CMP. An STI feature may be further formed over the defect after removal of the sacrificial portion, therein consuming any remaining defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.