Semiconductor wet etchant and method of forming interconnection structure using the same
US8043974B2 · kind B2 · utility
3Cited by
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Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Aug 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.