Plasma oxidizing method, storage medium, and plasma processing apparatus
US8043979B2 · kind B2 · utility
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3References
5Claims
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Key dates
| Filing date | Sep 27, 2007 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Nov 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.