Compositions for cleaning ion implanted photoresist in front end of line applications
US8044009B2 · kind B2 · utility
2Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2006 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Dec 4, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.