Semiconductor device with trench field plate including first and second semiconductor materials

US8044459B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Walter Rieger · Arnoldstein, AT
• Andrew Christopher Graeme Wood · St. Jakob im Rosental, AT
• Mathias Born · Alzenau, DE
• Ralf Siemieniec · Villach, AT
• Jan Ropohl · Regensburg, DE
• Martin Poelzl · Ossiach, AT
• Oliver Blank · Villach, AT
• Uli Hiller · Bad Abbach, DE
• Oliver Haeberlen · Villach, AT
• Rudolf Zelsacher · Klagenfurt, AT
• Maximilian Roesch · Villach, AT
• Joachim Krumrey · Eisenlohrsweg, AT

Key dates

• Filing date: Nov 10, 2008
• Grant date: Oct 25, 2011
• Expiry date: Jul 29, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.