Inventor · Regensburg, DE

Jan Ropohl

9Patents

2h-index

18Co-inventors

44Inventor score

Filing activity: Feb 4, 2005 → Mar 15, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8362551B2	Semiconductor device	Electricity	2	Active
US7060562B2	Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor	Electricity	2	Expired
US10629727B2	Method of manufacturing a semiconductor device including an LDMOS transistor	Electricity	1	Active
US10050139B2	Semiconductor device including a LDMOS transistor and method	Electricity	0	Active
US10304789B2	LDMOS transistor structure and method of manufacture	Electricity	0	Active
US10020270B2	Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method	Electricity	0	Active
US11302783B2	Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based device	Electricity	0	Active
US11728389B2	Group III nitride device having an ohmic contact	Electricity	0	Active
US8044459B2	Semiconductor device with trench field plate including first and second semiconductor materials	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.