Tunneling magnetic sensing element and method for producing same
US8045300B2 · kind B2 · utility
0Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Feb 25, 2008 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Aug 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/302
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.