Patent · US Active

Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate

US8048224B2 · kind B2 · utility

2Cited by

4References

21Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Gunnar Leibiger · Freiberg, DE
Frank Habel · Freiberg, DE
Stefan Eichler · Dresden, DE

Key dates

Filing date	May 7, 2007
Grant date	Nov 1, 2011
Priority date	—
Expiry date	Apr 7, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1008
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III-N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.