Large-area bulk gallium nitride wafer and method of manufacture
US8048225B2 · kind B2 · utility
64Cited by
1References
16Claims
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Key dates
| Filing date | Sep 9, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Sep 9, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.