Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device

US8048748B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stephan Kronholz · Dresden, DE
• Berthold Reimer · Dresden, DE
• Richard J. Carter · Los Altos, US
• Fernando Luiz Koch · Bitterfeld-Wolfen, DE
• Gisela Schammler · Dresden, DE

Key dates

• Filing date: Oct 29, 2010
• Grant date: Nov 1, 2011
• Expiry date: Oct 29, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/8311
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.