Method for producing a field effect device having self-aligned electrical connections with respect to the gate electrode
US8048751B2 · kind B2 · utility
0Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Sep 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate dielectric, an insulating layer and an etching mask are formed on substrate. The etching mask delineates at least the gate electrode and the source and drain contacts and the source, drain and gate output lines of the first metal level of a field effect device. The gate electrode and the future source and drain contacts are formed simultaneously by etching of the insulating layer. A gate material is deposited to form the gate electrode. The source and drain contacts are formed at least in the insulating layer. The source, drain and gate output lines of the first metal level are formed in the etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.