Resistive memory and methods of processing resistive memory
US8048755B2 · kind B2 · utility
53Cited by
30References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Feb 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.