Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial material

US8048796B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Robert Seidel · Dresden, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: May 24, 2010
• Grant date: Nov 1, 2011
• Expiry date: May 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such as a carbon material, which is deposited after the patterning of a dielectric material for forming therein a via opening. Consequently, superior process conditions during the patterning of the via opening and the sacrificial material in combination with a high degree of flexibility in selecting appropriate materials for the dielectric layer and the sacrificial layer may provide superior uniformity and device characteristics.