Constructions comprising hafnium oxide and/or zirconium oxide
US8049304B2 · kind B2 · utility
18Cited by
15References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | May 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.