Noel Rocklein
29Patents
5h-index
33Co-inventors
65Inventor score
Filing activity: Apr 28, 2006 → Jun 13, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7968406B2 | Memory cells, methods of forming dielectric materials, and methods of forming memory cells | Electricity | 21 | Active |
| US8183110B2 | Memory cells, methods of forming dielectric materials, and methods of forming memory cells | Electricity | 20 | Active |
| US8049304B2 | Constructions comprising hafnium oxide and/or zirconium oxide | Electricity | 18 | Active |
| US9397143B2 | Liner for phase change memory (PCM) array and associated techniques and configurations | Electricity | 14 | Active |
| US7820506B2 | Capacitors, dielectric structures, and methods of forming dielectric structures | Electricity | 8 | Active |
| US8760845B2 | Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same | Electricity | 5 | Active |
| US7537804B2 | ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates | Electricity | 5 | Active |
| US8603877B2 | Methods of forming dielectric material-containing structures | Electricity | 4 | Active |
| US7560392B2 | Electrical components for microelectronic devices and methods of forming the same | Electricity | 4 | Active |
| US7635623B2 | Methods of forming capacitors | Electricity | 4 | Active |
| US8236372B2 | Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 3 | Active |
| US8299462B2 | Constructions comprising hafnium oxide and/or zirconium oxide | Electricity | 3 | Active |
| US8105896B2 | Methods of forming capacitors | Electricity | 3 | Active |
| US8497566B2 | Capacitors including conductive TiOxNx | Electricity | 2 | Active |
| US7968969B2 | Electrical components for microelectronic devices | Electricity | 2 | Active |
| US8921821B2 | Memory cells | Electricity | 2 | Active |
| US8861179B2 | Capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 2 | Active |
| US8993044B2 | Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 1 | Active |
| US8310807B2 | Capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 1 | Active |
| US8187933B2 | Methods of forming dielectric material-containing structures | Electricity | 0 | Active |
| US9508931B2 | Memory cells and methods of forming memory cells | Electricity | 0 | Active |
| US8859329B2 | Memory cells and methods of forming memory cells | Physics | 0 | Active |
| US10923658B2 | Memory cells and methods of forming memory cells | Electricity | 0 | Active |
| US8450173B2 | Electrical components for microelectronic devices and methods of forming the same | Electricity | 0 | Active |
| US8629421B1 | Memory cells | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.