Directed reagents to improve material uniformity
US8052794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2005 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.