Patent · US Active

Wafer polishing method

US8053367B2 · kind B2 · utility

1Cited by

3References

10Claims

0Family size

Assignee

ADVANCED SEMICONDUCTOR ENGINEERING, INC. · TW

Inventor

Wei-Min Hsiao · New Taipei, TW

Key dates

Filing date	Sep 22, 2008
Grant date	Nov 8, 2011
Priority date	—
Expiry date	Mar 10, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG02B26/0833
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A wafer polishing method is provided. First, a wafer, having a first surface, a second surface, and a plurality of opening portions depressed on the first surface, is provided. A plastic adhesive is filled in the opening portions and cured later. A polishing step is performed to thin the thickness of the wafer. Therefore, the yield of the wafer in the polishing process can be improved by the protection of the plastic adhesive.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.