Method of reducing plasma stabilization time in a cyclic deposition process
US8053372B1 · kind B1 · utility
31Cited by
50References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 12, 2006 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Sep 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32137
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The deposition enhancement is derived from ions generated in a plasma. The techniques described reduce the time required for plasma stabilization, thereby reducing deposition time and improving efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.