Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets)

US8053838B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Xiaomeng Chen · Hsinchu, TW
• Byeong Y. Kim · Lagrangeville, US
• Mahender Kumar · Hopewell Junction, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Jun 26, 2008
• Grant date: Nov 8, 2011
• Expiry date: Aug 26, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A semiconductor structure, a fabrication method, and a design structure for a FinFet. The FinFet includes a dielectric layer, a central semiconductor fin region on the dielectric layer, a first semiconductor seed region on the dielectric layer, and a first strain creating fin region. The first semiconductor seed region is sandwiched between the first strain creating fin region and the dielectric layer. The first semiconductor seed region includes a first semiconductor material. The first strain creating fin region includes the first semiconductor material and a second semiconductor material different than the first semiconductor material. A first atom percent of the first semiconductor material in the first semiconductor seed region is different than a second atom percent of the first semiconductor material in the first strain creating fin region.