Method for fabricating metal-oxide semiconductor transistors
US8053847B2 · kind B2 · utility
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8References
18Claims
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Key dates
| Filing date | Nov 28, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.