Patent · US Active

Post-etch treatment system for removing residue on a substrate

US8057633B2 · kind B2 · utility

5Cited by

12References

28Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Yuji Tsukamoto · Wilmington, US
Thomas Hamelin · Georgetown, US
Yasuhisa KUDO · Beverly, US

Key dates

Filing date	Mar 28, 2006
Grant date	Nov 15, 2011
Priority date	—
Expiry date	Feb 2, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/6875
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.